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MJ15020 - NPN MJ15021 - PNP
Preferred Devices
Complementary Silicon Power Transistors
These transistors are designed for use as high frequency drivers in Audio Amplifiers.
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* * * *
High Gain Complementary Silicon Power Transistors Safe Operating Area 100% Tested 50 V, 3.0 A, 1.0 Sec Excellent Frequency Response -fT = 20 MHz min Pb-Free Packages are Available*
4.0 AMPERES COMPLEMENTARY SILICONPOWER TRANSISTORS 200 - 250 VOLTS, 150 WATTS
MAXIMUM RATINGS
Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Base Current - Continuous Emitter Current - Continuous Total Device Dissipation @ TC = 25_C Derate above 25_C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC IB IE PD TJ, Tstg MJ15020 MJ15021 250 250 7.0 4.0 2.0 6.0 150 0.86 -65 to +200 Unit Vdc Vdc Vdc Adc Adc Adc W W/_C _C MJ1502xG AYWW MEX TO-204AA (TO-3) CASE 1-07 STYLE 1
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case Symbol RqJC Max 1.17 Unit _C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
MJ1502x = Device Code x = 0 or 1 G = Pb-Free Package A = Assembly Location Y = Year WW = Work Week MEX = Country of Origin
ORDERING INFORMATION
Device MJ15020 MJ15020G MJ15021 MJ15021G *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. Package TO-204 TO-204 (Pb-Free) TO-204 TO-204 (Pb-Free) Shipping 100 Units / Tray 100 Units / Tray 100 Units / Tray 100 Units / Tray
Preferred devices are recommended choices for future use and best overall value.
(c) Semiconductor Components Industries, LLC, 2006
August, 2006 - Rev. 2
1
Publication Order Number: MJ15020/D
POWER DERATING FACTOR (%)
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II II I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2% DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (Note 1) SECOND BREAKDOWN OFF CHARACTERISTICS
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Output Capacitance (VCB = 10 Vdc, IE = 0, Ftest = 1.0 MHz)
Current-Gain - Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, ftest = 1.0 MHz)
Base-Emitter on Voltage (IC = 1.0 Adc, VCE = 4.0 Vdc)
Collector-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.1 Adc)
DC Current Gain (IC = 1.0 Adc, VCE = 4.0 V) (IC = 3.0 Adc, VCE = 4.0 V)
Second Breakdown Collector Current with Base Forward-Biased (VCE = 50 Vdc, t = 0.5 s (non-repetitive)
Emitter Cutoff Current (VEB = 7.0 Vdc, IC = 0)
Collector Cutoff Current (VCE = 200 Vdc, IB = 0)
Collector-Emitter Sustaining Voltage (Note 1) (IC = 100 mAdc, IB = 0)
Characteristic
100
40
80
20
60
0
MJ15020 - NPN
0
25
THERMAL DERATING
50
Figure 1. Power Derating
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125 100 150 75 TC, CASE TEMPERATURE (C) MJ15020, MJ15021 MJ15020, MJ15021 SECOND BREAKDOWN DERATING
2
MJ15021 - PNP
175 Cob hFE IS/b fT
VCEO(sus)
Symbol
VCE(sat)
VBE(on)
ICEO
IEBO
200 Min 250 3.0 20 30 10 - - - - - Max 500 500 500 2.0 1.0 - - - - - mAdc mAdc MHz Unit Vdc Vdc Adc Vdc - pF
MJ15020 - NPN
MJ15021 - PNP
TYPICAL DYNAMIC CHARACTERISTICS
200 100 70 50 30 20 PNP 10 7.0 5.0 3.0 2.0 0.1 TJ = 25C VCE = 4.0 Vdc
hFE, DC CURRENT GAIN
NPN
0.2 0.3 0.5 0.7 1.0 2.0 3.0 IC, COLLECTOR CURRENT (AMPS)
5.0 7.0
10
Figure 2. DC Current Gain
IC, COLLECTOR CURRENT (AMPS)
10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02
TC = 25C
WIRE BOND LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT
MJ15020/21 0.01 5.0 7.0 10 20 30 200 300 50 70 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
500
Figure 3. Maximum Rated Forward Biased Safe Operating Area
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3
MJ15020 - NPN
MJ15021 - PNP
PACKAGE DIMENSIONS TO-204 (TO-3) CASE 1-07 ISSUE Z
A N C E D
2 PL
-T- K
M
SEATING PLANE
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. ALL RULES AND NOTES ASSOCIATED WITH REFERENCED TO-204AA OUTLINE SHALL APPLY. DIM A B C D E G H K L N Q U V INCHES MIN MAX 1.550 REF --- 1.050 0.250 0.335 0.038 0.043 0.055 0.070 0.430 BSC 0.215 BSC 0.440 0.480 0.665 BSC --- 0.830 0.151 0.165 1.187 BSC 0.131 0.188 MILLIMETERS MIN MAX 39.37 REF --- 26.67 6.35 8.51 0.97 1.09 1.40 1.77 10.92 BSC 5.46 BSC 11.18 12.19 16.89 BSC --- 21.08 3.84 4.19 30.15 BSC 3.33 4.77
0.13 (0.005) U
2
TQ
M
Y
M
V H
L G
-Y- B
1
-Q- 0.13 (0.005)
M
TY
M
STYLE 1: PIN 1. BASE 2. EMITTER CASE: COLLECTOR
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
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4
MJ15020/D

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